LNF10N65 MOSFET. Datasheet pdf. Equivalent
Type Designator: LNF10N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 34.64 nS
Cossⓘ - Output Capacitance: 144.2 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-262
LNF10N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LNF10N65 Datasheet (PDF)
lnd10n65 lnc10n65 lne10n65 lnf10n65 lndn10n65.pdf
LND10N65/LNC10N65/LNE10N65/LNF10N65/LNDN10N65Lonten N-channel 650V, 10A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 10ADresulting device has low conduction resistance, R 1.0DS(on),maxsuperior switching performance and high avalanche Q 34.2 nCg,typenergy.Features Low RDS(on)
lnd10n65 lnc10n65 lne10n65 lnf10n65.pdf
LND10N65/LNC10N65/LNE10N65/LNF10N65 Lonten N-channel 650V, 10A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planer VDMOS technology. The ID 10A resulting device has low conduction resistance, RDS(on),max 1.0 superior switching performance and high avalanche Qg,typ 34.2 nC energy. Features Low RDS(on) Low gate
lnd10n60 lnc10n60 lne10n60 lnf10n60.pdf
LND10N60/LNC10N60/LNE10N60/LNF10N60 Lonten N-channel 600V, 10A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planer VDMOS technology. The ID 10A resulting device has low conduction resistance, RDS(on),max 0.9 superior switching performance and high avalance Qg,typ 31.4 nC energy. Features Low RDS(on) Low gate
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
