NP8205MR Specs and Replacement
Type Designator: NP8205MR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 64 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SOT23-6L
NP8205MR substitution
- MOSFET ⓘ Cross-Reference Search
NP8205MR datasheet
np8205mr.pdf
NP8205MR 20V Dual N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP8205MR uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V ID =6.5A DS Marking and pin assignment ... See More ⇒
Detailed specifications: LNF12N65, LNF4N60, LNF4N65, LNF7N65D, XR46000ESETR, MC2539, MF5853CS, NP2301AMR-G, IRFZ44, LNG03R031, LNG045R055, LNG045R090, LNG045R140, LNG045R210, LNG04R035B, LNG04R050, LNG04R075
Keywords - NP8205MR MOSFET specs
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