NP8205MR Datasheet and Replacement
Type Designator: NP8205MR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 64 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SOT23-6L
NP8205MR substitution
NP8205MR Datasheet (PDF)
np8205mr.pdf

NP8205MR20V Dual N-Channel Enhancement Mode MOSFETDescription Schematic diagramThe NP8205MR uses advanced trench technologyto provide excellent R , low gate charge andDS(ON)operation with gate voltages as low as 2.5V. Thisdevice is suitable for use as a Battery protection or inother Switching application.General Features V =20VID =6.5ADSMarking and pin assignment
Datasheet: LNF12N65 , LNF4N60 , LNF4N65 , LNF7N65D , XR46000ESETR , MC2539 , MF5853CS , NP2301AMR-G , IRFZ44 , LNG03R031 , LNG045R055 , LNG045R090 , LNG045R140 , LNG045R210 , LNG04R035B , LNG04R050 , LNG04R075 .
History: TK7A65W | PZ5D8EA | R6015FNX | IRF6668PBF | FMC11N60E | SM1A23NSV | SMK0270F
Keywords - NP8205MR MOSFET datasheet
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History: TK7A65W | PZ5D8EA | R6015FNX | IRF6668PBF | FMC11N60E | SM1A23NSV | SMK0270F



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