All MOSFET. LNG06R310 Datasheet

 

LNG06R310 Datasheet and Replacement


   Type Designator: LNG06R310
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.9 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 19 nC
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 64 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: TO-252
 

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LNG06R310 Datasheet (PDF)

 ..1. Size:930K  lonten
 lng06r310 lnh06r310.pdf pdf_icon

LNG06R310

LNG06R310/LNH06R310Lonten N-channel 60V, 28A, 31m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 31mGStechnology. This advanced technology has been I 28ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand hig

 8.1. Size:1062K  lonten
 lnc06r140 lne06r140 lng06r140 lnh06r140.pdf pdf_icon

LNG06R310

LNC06R140/LNE06R140/LNG06R140/LNH06R140Lonten N-channel 60V, 45A, 14m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 14mGStechnology. This advanced technology has been I 45ADespecially tailored to minimize on-state resistance,provide superior switching performance,

 8.2. Size:1013K  lonten
 lnh06r062 lng06r062.pdf pdf_icon

LNG06R310

LNH06R062/LNG06R062 Lonten N-channel 60V, 100A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 100A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand

 8.3. Size:1140K  lonten
 lnh06r079 lng06r079.pdf pdf_icon

LNG06R310

LNH06R079/LNG06R079 Lonten N-channel 60V, 80A, 7.9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 7.9m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi

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Datasheet: LNG05R155 , LNG05R230 , LNG06R062 , LNG06R079 , LNG06R110 , LNG06R140 , LNG06R200 , LNG06R230 , IRFP260 , LNG08R085 , LNG2N60 , LNG2N65 , LNG4N60 , LNG4N65 , LNG4N80 , LNG5N50 , LNG5N65B .

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