LNG06R310 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: LNG06R310
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 50 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 1.9 V
Максимально допустимый постоянный ток стока |Id|: 28 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 19 nC
Время нарастания (tr): 17 ns
Выходная емкость (Cd): 64 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.031 Ohm
Тип корпуса: TO-252
LNG06R310 Datasheet (PDF)
lng06r310 lnh06r310.pdf
LNG06R310/LNH06R310Lonten N-channel 60V, 28A, 31m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 31mGStechnology. This advanced technology has been I 28ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand hig
lnc06r140 lne06r140 lng06r140 lnh06r140.pdf
LNC06R140/LNE06R140/LNG06R140/LNH06R140Lonten N-channel 60V, 45A, 14m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 14mGStechnology. This advanced technology has been I 45ADespecially tailored to minimize on-state resistance,provide superior switching performance,
lnh06r062 lng06r062.pdf
LNH06R062/LNG06R062 Lonten N-channel 60V, 100A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 100A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand
lnh06r079 lng06r079.pdf
LNH06R079/LNG06R079 Lonten N-channel 60V, 80A, 7.9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 7.9m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi
lnh06r230 lng06r230 lnc06r230.pdf
LNH06R230/LNG06R230/LNC06R230Lonten N-channel 60V, 33A, 23m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 23mGStechnology. This advanced technology has been I 33ADespecially tailored to minimize on-state resistance,provide superior switching performance, and with
lnh06r200 lng06r200 lnc06r200.pdf
LNH06R200/LNG06R200/LNC06R200Lonten N-channel 60V, 35A, 20m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 20mGStechnology. This advanced technology has been I 35ADespecially tailored to minimize on-state resistance,provide superior switching performance, and with
lnh06r110 lng06r110.pdf
LNH06R110/LNG06R110 Lonten N-channel 60V, 60A, 11m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 11m technology. This advanced technology has been ID 60A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high
lnh06r140 lng06r140.pdf
LNH06R140/LNG06R140 Lonten N-channel 60V, 45A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 14m technology. This advanced technology has been ID 45A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high
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