LNG08R085 MOSFET. Datasheet pdf. Equivalent
Type Designator: LNG08R085
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 127 nC
trⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 256 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO-252
LNG08R085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LNG08R085 Datasheet (PDF)
lng08r085 lnh08r085.pdf
LNG08R085\LNH08R085 Lonten N-channel 80V, 70A, 8.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 8.5m technology. This advanced technology has been ID 70A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi
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