All MOSFET. LNG08R085 Datasheet

 

LNG08R085 MOSFET. Datasheet pdf. Equivalent


   Type Designator: LNG08R085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 127 nC
   trⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 256 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-252

 LNG08R085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LNG08R085 Datasheet (PDF)

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 lng08r085 lnh08r085.pdf

LNG08R085 LNG08R085

LNG08R085\LNH08R085 Lonten N-channel 80V, 70A, 8.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 8.5m technology. This advanced technology has been ID 70A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi

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