All MOSFET. LNG08R085 Datasheet

 

LNG08R085 Datasheet and Replacement


   Type Designator: LNG08R085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 256 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-252
 

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LNG08R085 Datasheet (PDF)

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LNG08R085

LNG08R085\LNH08R085 Lonten N-channel 80V, 70A, 8.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 8.5m technology. This advanced technology has been ID 70A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi

Datasheet: LNG05R230 , LNG06R062 , LNG06R079 , LNG06R110 , LNG06R140 , LNG06R200 , LNG06R230 , LNG06R310 , SKD502T , LNG2N60 , LNG2N65 , LNG4N60 , LNG4N65 , LNG4N80 , LNG5N50 , LNG5N65B , LNG7N60D .

History: JMH65R980AF | AOTF298L | 2SK3989-01MR | AOT7S60L | L2N7002KN3T5G | SPB100N06S2L-05 | AOTF18N65L

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