LNG7N65D PDF and Equivalents Search

 

LNG7N65D Specs and Replacement

Type Designator: LNG7N65D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33.4 nS

Cossⓘ - Output Capacitance: 111 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-252

LNG7N65D substitution

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LNG7N65D datasheet

 ..1. Size:1097K  lonten
 lnc7n65d lnd7n65d lng7n65d lnh7n65d lnf7n65d.pdf pdf_icon

LNG7N65D

LNC7N65D LND7N65D LNG7N65D LNH7N65D LNF7N65D Lonten N-channel 650V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.4 superior switching performance and high avalance Qg,typ 20.7nC energy. Features Low RDS(on) Lo... See More ⇒

 8.1. Size:1036K  lonten
 lnc7n60d lnd7n60d lng7n60d lnh7n60d.pdf pdf_icon

LNG7N65D

LNC7N60D LND7N60D LNG7N60D LNH7N60D Lonten N-channel 600V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.3 superior switching performance and high avalance Qg,typ 20.6nC energy. Features Low RDS(on) Low gate cha... See More ⇒

Detailed specifications: LNG2N60, LNG2N65, LNG4N60, LNG4N65, LNG4N80, LNG5N50, LNG5N65B, LNG7N60D, SPP20N60C3, LNH03R031, LNH045R055, LNH045R090, LNH045R140, LNH045R210, LNH04R035B, LNH04R050, LNH04R075

Keywords - LNG7N65D MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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