All MOSFET. LNH03R031 Datasheet

 

LNH03R031 MOSFET. Datasheet pdf. Equivalent


   Type Designator: LNH03R031
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 146 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 930 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
   Package: TO-251

 LNH03R031 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LNH03R031 Datasheet (PDF)

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 lng03r031 lnh03r031.pdf

LNH03R031 LNH03R031

LNG03R031/ LNH03R031Lonten N-channel 30V, 120A, 3.1m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 30VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 3.1mGStechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstan

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