LNH03R031 Specs and Replacement
Type Designator: LNH03R031
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 930 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
Package: TO-251
LNH03R031 substitution
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LNH03R031 datasheet
lng03r031 lnh03r031.pdf
LNG03R031/ LNH03R031 Lonten N-channel 30V, 120A, 3.1m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 30V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 3.1m GS technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stan... See More ⇒
Detailed specifications: LNG2N65, LNG4N60, LNG4N65, LNG4N80, LNG5N50, LNG5N65B, LNG7N60D, LNG7N65D, SKD502T, LNH045R055, LNH045R090, LNH045R140, LNH045R210, LNH04R035B, LNH04R050, LNH04R075, LNH04R120
Keywords - LNH03R031 MOSFET specs
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