All MOSFET. LNH03R031 Datasheet

 

LNH03R031 Datasheet and Replacement


   Type Designator: LNH03R031
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 930 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
   Package: TO-251
 

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LNH03R031 Datasheet (PDF)

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LNH03R031

LNG03R031/ LNH03R031Lonten N-channel 30V, 120A, 3.1m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 30VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 3.1mGStechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstan

Datasheet: LNG2N65 , LNG4N60 , LNG4N65 , LNG4N80 , LNG5N50 , LNG5N65B , LNG7N60D , LNG7N65D , IRF9540N , LNH045R055 , LNH045R090 , LNH045R140 , LNH045R210 , LNH04R035B , LNH04R050 , LNH04R075 , LNH04R120 .

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