All MOSFET. LNH08R085 Datasheet

 

LNH08R085 Datasheet and Replacement


   Type Designator: LNH08R085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 256 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-251
 

 LNH08R085 substitution

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LNH08R085 Datasheet (PDF)

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LNH08R085

LNG08R085\LNH08R085 Lonten N-channel 80V, 70A, 8.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 8.5m technology. This advanced technology has been ID 70A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi

Datasheet: LNH05R230 , LNH06R062 , LNH06R079 , LNH06R110 , LNH06R140 , LNH06R200 , LNH06R230 , LNH06R310 , 5N65 , LNH2N60 , LNH2N65 , LNH4N60 , LNH4N65 , LNH4N80 , LNH5N50 , LNH5N65B , LNH7N60D .

History: S-LBSS8402DW1T1G | IXTH1R4N250P3 | NVMFS5C628NL | BLA1011S-200R | HFP9N50 | AON7262E | BSC022N03SG

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