LNH08R085 Specs and Replacement
Type Designator: LNH08R085
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 256 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO-251
LNH08R085 substitution
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LNH08R085 datasheet
lng08r085 lnh08r085.pdf
LNG08R085 LNH08R085 Lonten N-channel 80V, 70A, 8.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 80V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 8.5m technology. This advanced technology has been ID 70A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi... See More ⇒
Detailed specifications: LNH05R230, LNH06R062, LNH06R079, LNH06R110, LNH06R140, LNH06R200, LNH06R230, LNH06R310, 2SK3568, LNH2N60, LNH2N65, LNH4N60, LNH4N65, LNH4N80, LNH5N50, LNH5N65B, LNH7N60D
Keywords - LNH08R085 MOSFET specs
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