All MOSFET. LNL04R075 Datasheet

 

LNL04R075 Datasheet and Replacement


   Type Designator: LNL04R075
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 98.8 nS
   Cossⓘ - Output Capacitance: 316 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: SOP-8
 

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LNL04R075 Datasheet (PDF)

 ..1. Size:950K  lonten
 lnl04r075.pdf pdf_icon

LNL04R075

LNL04R075 Lonten N-channel 40V, 18A, 7.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 7.5m technology. This advanced technology has been ID 18A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy

 8.1. Size:854K  lonten
 lnl04r120.pdf pdf_icon

LNL04R075

LNL04R120Lonten N-channel 40V, 12A, 12m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 12mGStechnology. This advanced technology has been I 12ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy p

Datasheet: LNH2N65 , LNH4N60 , LNH4N65 , LNH4N80 , LNH5N50 , LNH5N65B , LNH7N60D , LNH7N65D , IRF2807 , LNL04R120 , LNN04R040B , LNN04R050 , LNN04R075 , LNN06R062 , LNN06R140 , LNND04R120 , LNSA3400 .

History: IRFP3306PBF | 30N06L-TM3-T | DMN2600UFB | SSM3K7002BF

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