LNL04R075 Specs and Replacement
Type Designator: LNL04R075
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 98.8 nS
Cossⓘ - Output Capacitance: 316 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: SOP-8
LNL04R075 substitution
- MOSFET ⓘ Cross-Reference Search
LNL04R075 datasheet
lnl04r075.pdf
LNL04R075 Lonten N-channel 40V, 18A, 7.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 7.5m technology. This advanced technology has been ID 18A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy ... See More ⇒
lnl04r120.pdf
LNL04R120 Lonten N-channel 40V, 12A, 12m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 12m GS technology. This advanced technology has been I 12A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy p... See More ⇒
Detailed specifications: LNH2N65, LNH4N60, LNH4N65, LNH4N80, LNH5N50, LNH5N65B, LNH7N60D, LNH7N65D, STF13NM60N, LNL04R120, LNN04R040B, LNN04R050, LNN04R075, LNN06R062, LNN06R140, LNND04R120, LNSA3400
Keywords - LNL04R075 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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