LNN06R140 PDF and Equivalents Search

 

LNN06R140 Specs and Replacement

Type Designator: LNN06R140

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 43 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.1 nS

Cossⓘ - Output Capacitance: 168 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: DFN5X6

LNN06R140 substitution

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LNN06R140 datasheet

 ..1. Size:967K  1
lnn06r140.pdf pdf_icon

LNN06R140

LNN06R140 Lonten N-channel 60V, 43A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 14m GS technology. This advanced technology has been I 43A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy p... See More ⇒

 ..2. Size:967K  lonten
lnn06r140.pdf pdf_icon

LNN06R140

LNN06R140 Lonten N-channel 60V, 43A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 14m GS technology. This advanced technology has been I 43A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy p... See More ⇒

 8.1. Size:913K  1
lnn06r062.pdf pdf_icon

LNN06R140

LNN06R062 Lonten N-channel 60V, 80A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy ... See More ⇒

 8.2. Size:913K  lonten
lnn06r062.pdf pdf_icon

LNN06R140

LNN06R062 Lonten N-channel 60V, 80A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy ... See More ⇒

Detailed specifications: LNH7N60D, LNH7N65D, LNL04R075, LNL04R120, LNN04R040B, LNN04R050, LNN04R075, LNN06R062, AO3400A, LNND04R120, LNSA3400, LNSC2302, LNSC3400, LNU2N65, LPL4459, LPSA3481, LPSA3487

Keywords - LNN06R140 MOSFET specs

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