Справочник MOSFET. LNN06R140

 

LNN06R140 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: LNN06R140
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 43 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 16.1 ns
   Cossⓘ - Выходная емкость: 168 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
   Тип корпуса: DFN5X6
 

 Аналог (замена) для LNN06R140

   - подбор ⓘ MOSFET транзистора по параметрам

 

LNN06R140 Datasheet (PDF)

 ..1. Size:967K  1
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LNN06R140

LNN06R140Lonten N-channel 60V, 43A, 14m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 14mGStechnology. This advanced technology has been I 43ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy p

 ..2. Size:967K  lonten
 lnn06r140.pdf pdf_icon

LNN06R140

LNN06R140Lonten N-channel 60V, 43A, 14m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 14mGStechnology. This advanced technology has been I 43ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy p

 8.1. Size:913K  1
 lnn06r062.pdf pdf_icon

LNN06R140

LNN06R062 Lonten N-channel 60V, 80A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy

 8.2. Size:913K  lonten
 lnn06r062.pdf pdf_icon

LNN06R140

LNN06R062 Lonten N-channel 60V, 80A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... LNH7N60D , LNH7N65D , LNL04R075 , LNL04R120 , LNN04R040B , LNN04R050 , LNN04R075 , LNN06R062 , RU6888R , LNND04R120 , LNSA3400 , LNSC2302 , LNSC3400 , LNU2N65 , LPL4459 , LPSA3481 , LPSA3487 .

History: P06B03LVG | TPC60R580C | AM7304N | NCEP6060GU | DMP6023LFG | UTT40P04 | SPP15N65C3

 

 
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