LNSA3400 Specs and Replacement
Type Designator: LNSA3400
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 113.2 nS
Cossⓘ - Output Capacitance: 62.4 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: SOT-23
LNSA3400 substitution
- MOSFET ⓘ Cross-Reference Search
LNSA3400 datasheet
lnsa3400.pdf
LNSA3400 Lonten N-channel 30V, 5.8A, 26m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 30V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 26m GS technology. This advanced technology has been I 5.8A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy ... See More ⇒
Detailed specifications: LNL04R075, LNL04R120, LNN04R040B, LNN04R050, LNN04R075, LNN06R062, LNN06R140, LNND04R120, STP65NF06, LNSC2302, LNSC3400, LNU2N65, LPL4459, LPSA3481, LPSA3487, LPSC2301, LPSC3481
Keywords - LNSA3400 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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