LNSA3400 Datasheet and Replacement
Type Designator: LNSA3400
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 5.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 113.2 nS
Cossⓘ - Output Capacitance: 62.4 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: SOT-23
- MOSFET Cross-Reference Search
LNSA3400 Datasheet (PDF)
lnsa3400.pdf

LNSA3400Lonten N-channel 30V, 5.8A, 26m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 30VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 26mGStechnology. This advanced technology has been I 5.8ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: MCH3484 | DMN30H4D0L
Keywords - LNSA3400 MOSFET datasheet
LNSA3400 cross reference
LNSA3400 equivalent finder
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History: MCH3484 | DMN30H4D0L



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