LNSA3400 Datasheet and Replacement
Type Designator: LNSA3400
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 113.2 nS
Cossⓘ - Output Capacitance: 62.4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: SOT-23
LNSA3400 substitution
LNSA3400 Datasheet (PDF)
lnsa3400.pdf

LNSA3400Lonten N-channel 30V, 5.8A, 26m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 30VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 26mGStechnology. This advanced technology has been I 5.8ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy
Datasheet: LNL04R075 , LNL04R120 , LNN04R040B , LNN04R050 , LNN04R075 , LNN06R062 , LNN06R140 , LNND04R120 , IRFZ48N , LNSC2302 , LNSC3400 , LNU2N65 , LPL4459 , LPSA3481 , LPSA3487 , LPSC2301 , LPSC3481 .
History: STP20NM60A | IXFP20N85X | APM9988QB | IPG20N04S4L-07A | TJ10S04M3L | BRCS18N20DP
Keywords - LNSA3400 MOSFET datasheet
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History: STP20NM60A | IXFP20N85X | APM9988QB | IPG20N04S4L-07A | TJ10S04M3L | BRCS18N20DP



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