All MOSFET. LNSA3400 Datasheet

 

LNSA3400 Datasheet and Replacement


   Type Designator: LNSA3400
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 113.2 nS
   Cossⓘ - Output Capacitance: 62.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: SOT-23
 

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LNSA3400 Datasheet (PDF)

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LNSA3400

LNSA3400Lonten N-channel 30V, 5.8A, 26m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 30VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 26mGStechnology. This advanced technology has been I 5.8ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy

Datasheet: LNL04R075 , LNL04R120 , LNN04R040B , LNN04R050 , LNN04R075 , LNN06R062 , LNN06R140 , LNND04R120 , IRFZ48N , LNSC2302 , LNSC3400 , LNU2N65 , LPL4459 , LPSA3481 , LPSA3487 , LPSC2301 , LPSC3481 .

History: RJK6018DPM | STN2300A | KI1539DL | NCE60H10 | OSG60R200FSZF | IPB039N10N3GE8187 | H02N60SI

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