All MOSFET. LNSC2302 Datasheet

 

LNSC2302 Datasheet and Replacement


   Type Designator: LNSC2302
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: SOT-23
 

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LNSC2302 Datasheet (PDF)

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LNSC2302

LNSC2302 Lonten N-channel 20V, 4A, 42m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 20V effect transistors are using trench DMOS RDS(on).max@ VGS=4.5V 42m technology. This advanced technology has been ID 4A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy puls

Datasheet: LNL04R120 , LNN04R040B , LNN04R050 , LNN04R075 , LNN06R062 , LNN06R140 , LNND04R120 , LNSA3400 , NCEP15T14 , LNSC3400 , LNU2N65 , LPL4459 , LPSA3481 , LPSA3487 , LPSC2301 , LPSC3481 , LPSC3487 .

History: SSM6J23FE | LNH04R075 | IRFP440R | CS12N65FA9R | QS8M51 | MME70R380PRH | 25N10L-TF3-T

Keywords - LNSC2302 MOSFET datasheet

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