LNSC2302 MOSFET. Datasheet pdf. Equivalent
Type Designator: LNSC2302
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.2 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 50 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: SOT-23
LNSC2302 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LNSC2302 Datasheet (PDF)
..1. Size:883K lonten
lnsc2302.pdf
lnsc2302.pdf
LNSC2302 Lonten N-channel 20V, 4A, 42m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 20V effect transistors are using trench DMOS RDS(on).max@ VGS=4.5V 42m technology. This advanced technology has been ID 4A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy puls
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