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LNSC2302 Specs and Replacement

Type Designator: LNSC2302

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: SOT-23

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LNSC2302 datasheet

 ..1. Size:883K  lonten
 lnsc2302.pdf pdf_icon

LNSC2302

LNSC2302 Lonten N-channel 20V, 4A, 42m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 20V effect transistors are using trench DMOS RDS(on).max@ VGS=4.5V 42m technology. This advanced technology has been ID 4A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy puls... See More ⇒

Detailed specifications: LNL04R120, LNN04R040B, LNN04R050, LNN04R075, LNN06R062, LNN06R140, LNND04R120, LNSA3400, IRF1405, LNSC3400, LNU2N65, LPL4459, LPSA3481, LPSA3487, LPSC2301, LPSC3481, LPSC3487

Keywords - LNSC2302 MOSFET specs

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