LNSC3400 MOSFET. Datasheet pdf. Equivalent
Type Designator: LNSC3400
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.35 V
|Id|ⓘ - Maximum Drain Current: 5.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13.6 nC
trⓘ - Rise Time: 113.2 nS
Cossⓘ - Output Capacitance: 62.4 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: SOT-23
LNSC3400 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LNSC3400 Datasheet (PDF)
lnsc3400.pdf
LNSC3400Lonten N-channel 30V, 5.8A, 26m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 30VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 26mGStechnology. This advanced technology has been I 5.8ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
