All MOSFET. LNSC3400 Datasheet

 

LNSC3400 MOSFET. Datasheet pdf. Equivalent


   Type Designator: LNSC3400
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 1.4 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 12 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 1.35 V
   Maximum Drain Current |Id|: 5.8 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 13.6 nC
   Rise Time (tr): 113.2 nS
   Drain-Source Capacitance (Cd): 62.4 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm
   Package: SOT-23

 LNSC3400 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LNSC3400 Datasheet (PDF)

 ..1. Size:880K  lonten
 lnsc3400.pdf

LNSC3400 LNSC3400

LNSC3400Lonten N-channel 30V, 5.8A, 26m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 30VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 26mGStechnology. This advanced technology has been I 5.8ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , FQPF7N80C , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top