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LNSC3400 Specs and Replacement

Type Designator: LNSC3400

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 113.2 nS

Cossⓘ - Output Capacitance: 62.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: SOT-23

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LNSC3400 datasheet

 ..1. Size:880K  lonten
 lnsc3400.pdf pdf_icon

LNSC3400

LNSC3400 Lonten N-channel 30V, 5.8A, 26m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 30V DSS effect transistors are using trench DMOS R DS(on).max@ V =10V 26m GS technology. This advanced technology has been I 5.8A D especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy ... See More ⇒

Detailed specifications: LNN04R040B, LNN04R050, LNN04R075, LNN06R062, LNN06R140, LNND04R120, LNSA3400, LNSC2302, 7N60, LNU2N65, LPL4459, LPSA3481, LPSA3487, LPSC2301, LPSC3481, LPSC3487, LSB55R050GT

Keywords - LNSC3400 MOSFET specs

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