All MOSFET. LNU2N65 Datasheet

 

LNU2N65 Datasheet and Replacement


   Type Designator: LNU2N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10.2 nC
   tr ⓘ - Rise Time: 35.6 nS
   Cossⓘ - Output Capacitance: 36 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.2 Ohm
   Package: TO-126
 
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LNU2N65 Datasheet (PDF)

 ..1. Size:1401K  lonten
 lnd2n65 lnc2n65 lng2n65 lnh2n65 lnu2n65.pdf pdf_icon

LNU2N65

LND2N65/LNC2N65/LNG2N65/LNH2N65/LNU2N65Lonten N-channel 650V, 2A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 2ADresulting device has low conduction resistance, R 5.2DS(on),maxsuperior switching performance and high avalance Q 10.2 nCg,typenergy.Features Low RDS(on) Low gate

Datasheet: LNN04R050 , LNN04R075 , LNN06R062 , LNN06R140 , LNND04R120 , LNSA3400 , LNSC2302 , LNSC3400 , RU7088R , LPL4459 , LPSA3481 , LPSA3487 , LPSC2301 , LPSC3481 , LPSC3487 , LSB55R050GT , LSB55R066GT .

Keywords - LNU2N65 MOSFET datasheet

 LNU2N65 cross reference
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