LNU2N65 PDF and Equivalents Search

 

LNU2N65 Specs and Replacement

Type Designator: LNU2N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35.6 nS

Cossⓘ - Output Capacitance: 36 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.2 Ohm

Package: TO-126

LNU2N65 substitution

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LNU2N65 datasheet

 ..1. Size:1401K  lonten
 lnd2n65 lnc2n65 lng2n65 lnh2n65 lnu2n65.pdf pdf_icon

LNU2N65

LND2N65/LNC2N65/LNG2N65/LNH2N65/LNU2N65 Lonten N-channel 650V, 2A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 650V DSS advanced planer VDMOS technology. The I 2A D resulting device has low conduction resistance, R 5.2 DS(on),max superior switching performance and high avalance Q 10.2 nC g,typ energy. Features Low R DS(on) Low gate... See More ⇒

Detailed specifications: LNN04R050, LNN04R075, LNN06R062, LNN06R140, LNND04R120, LNSA3400, LNSC2302, LNSC3400, IRFZ48N, LPL4459, LPSA3481, LPSA3487, LPSC2301, LPSC3481, LPSC3487, LSB55R050GT, LSB55R066GT

Keywords - LNU2N65 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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