LPSC2301 Datasheet and Replacement
Type Designator: LPSC2301
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.3 nS
Cossⓘ - Output Capacitance: 51.7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: SOT-23
LPSC2301 substitution
LPSC2301 Datasheet (PDF)
lpsc2301.pdf

LPSC2301 Lonten P-channel -20V, -2A, 110m Power MOSFET Description Product Summary These P-Channel enhancement mode power field VDSS -20V effect transistors are using trench DMOS RDS(on).max@ VGS=-4.5V 110m technology. This advanced technology has been ID -2A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high ener
Datasheet: LNND04R120 , LNSA3400 , LNSC2302 , LNSC3400 , LNU2N65 , LPL4459 , LPSA3481 , LPSA3487 , AON7403 , LPSC3481 , LPSC3487 , LSB55R050GT , LSB55R066GT , LSB55R140GF , LSB55R140GT , LSB60R030HT , LSB60R039GT .
History: TSM75N75CZ | AP4543GEH-HF | PDN2309S | NCE60N1K0I
Keywords - LPSC2301 MOSFET datasheet
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History: TSM75N75CZ | AP4543GEH-HF | PDN2309S | NCE60N1K0I



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