All MOSFET. LPSC2301 Datasheet

 

LPSC2301 Datasheet and Replacement


   Type Designator: LPSC2301
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.3 nS
   Cossⓘ - Output Capacitance: 51.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SOT-23
 

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LPSC2301 Datasheet (PDF)

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LPSC2301

LPSC2301 Lonten P-channel -20V, -2A, 110m Power MOSFET Description Product Summary These P-Channel enhancement mode power field VDSS -20V effect transistors are using trench DMOS RDS(on).max@ VGS=-4.5V 110m technology. This advanced technology has been ID -2A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high ener

Datasheet: LNND04R120 , LNSA3400 , LNSC2302 , LNSC3400 , LNU2N65 , LPL4459 , LPSA3481 , LPSA3487 , MMD60R360PRH , LPSC3481 , LPSC3487 , LSB55R050GT , LSB55R066GT , LSB55R140GF , LSB55R140GT , LSB60R030HT , LSB60R039GT .

History: LSB55R140GF

Keywords - LPSC2301 MOSFET datasheet

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