LPSC2301 PDF and Equivalents Search

 

LPSC2301 Specs and Replacement

Type Designator: LPSC2301

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.3 nS

Cossⓘ - Output Capacitance: 51.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: SOT-23

LPSC2301 substitution

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LPSC2301 datasheet

 ..1. Size:938K  lonten
 lpsc2301.pdf pdf_icon

LPSC2301

LPSC2301 Lonten P-channel -20V, -2A, 110m Power MOSFET Description Product Summary These P-Channel enhancement mode power field VDSS -20V effect transistors are using trench DMOS RDS(on).max@ VGS=-4.5V 110m technology. This advanced technology has been ID -2A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high ener... See More ⇒

Detailed specifications: LNND04R120, LNSA3400, LNSC2302, LNSC3400, LNU2N65, LPL4459, LPSA3481, LPSA3487, IRF9640, LPSC3481, LPSC3487, LSB55R050GT, LSB55R066GT, LSB55R140GF, LSB55R140GT, LSB60R030HT, LSB60R039GT

Keywords - LPSC2301 MOSFET specs

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