LPSC3487 MOSFET. Datasheet pdf. Equivalent
Type Designator: LPSC3487
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 4.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14.8 nC
trⓘ - Rise Time: 31.1 nS
Cossⓘ - Output Capacitance: 103 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
Package: SOT-23
LPSC3487 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LPSC3487 Datasheet (PDF)
lpsc3487.pdf
LPSC3487 Lonten P-channel -30V, -4.3A, 46m Power MOSFET Description Product Summary These P-Channel enhancement mode power field VDSS -30V effect transistors are using trench DMOS R GS DS(on).max@ V =-10V 46m technology. This advanced technology has been ID -4.3A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand
lpsc3481.pdf
LPSC3481 Lonten P-channel -30V, -4.0A, 50m Power MOSFET Description Product Summary These P-Channel enhancement mode power field VDSS -30V effect transistors are using trench DMOS R GS DS(on).max@ V =-10V 50m technology. This advanced technology has been ID -4.0A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: KI2305
