All MOSFET. LSB65R041GT Datasheet

 

LSB65R041GT Datasheet and Replacement


   Type Designator: LSB65R041GT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 78 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 4800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: TO-247
 

 LSB65R041GT substitution

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LSB65R041GT Datasheet (PDF)

 ..1. Size:807K  lonten
 lsb65r041gt.pdf pdf_icon

LSB65R041GT

LSB65R041GT LonFET Lonten N-channel 650V, 78A, 0.041 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.041 device has extremely low on resistance, making it IDM 230A especially suitable for applications which require Qg,typ 110nC superior power density

 4.1. Size:813K  lonten
 lsb65r041gf.pdf pdf_icon

LSB65R041GT

LSB65R041GF LonFET Lonten N-channel 650V, 78A, 0.041 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.041 device has extremely low on resistance, making it IDM 230A especially suitable for applications which require Qg,typ 110nC superior power density

 7.1. Size:1060K  lonten
 lsb65r099gf lsd65r099gf lse65r099gf.pdf pdf_icon

LSB65R041GT

LSB65R099GF/LSD65R099GF/LSE65R099GFLonFETLonten N-channel 650V, 40A, 0.099 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.099DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require Q 66nCg,typ

 7.2. Size:962K  lonten
 lsb65r070gf.pdf pdf_icon

LSB65R041GT

LSB65R070GF LonFET Lonten N-channel 650V, 47A, 0.07 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.070 device has extremely low on resistance, making it IDM 141A especially suitable for applications which require Qg,typ 87nC superior power density

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Datasheet: LSB60R099HT , LSB60R105HF , LSB60R125HT , LSB60R170GF , LSB60R170GT , LSB60R180HT , LSB60R280HT , LSB65R041GF , IRF640 , LSB65R070GF , LSB65R099GF , LSB65R099GT , LSB65R125HT , LSB65R180GF , LSB65R180GT , LSB65R180HT , LSB65R380HT .

History: SE30150 | DMG8880LSS | SQM90142E | CS65N20-30 | C3M0065100K | IPB120N08S4-03 | IXFV110N10P

Keywords - LSB65R041GT MOSFET datasheet

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