LSB65R099GF Specs and Replacement
Type Designator: LSB65R099GF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 43.8 nS
Cossⓘ - Output Capacitance: 116 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO-247
LSB65R099GF substitution
- MOSFET ⓘ Cross-Reference Search
LSB65R099GF datasheet
lsb65r099gf lsd65r099gf lse65r099gf.pdf
LSB65R099GF/LSD65R099GF/LSE65R099GF LonFET Lonten N-channel 650V, 40A, 0.099 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.099 DS(on),max device has extremely low on resistance, making it I 120A DM especially suitable for applications which require Q 66nC g,typ ... See More ⇒
lsb65r099gt lsd65r099gt lse65r099gt.pdf
LSB65R099GT/LSD65R099GT/LSE65R099GT LonFET Lonten N-channel 650V, 40A, 0.099 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.099 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC ... See More ⇒
lsb65r041gt.pdf
LSB65R041GT LonFET Lonten N-channel 650V, 78A, 0.041 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.041 device has extremely low on resistance, making it IDM 230A especially suitable for applications which require Qg,typ 110nC superior power density... See More ⇒
lsb65r070gf.pdf
LSB65R070GF LonFET Lonten N-channel 650V, 47A, 0.07 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.070 device has extremely low on resistance, making it IDM 141A especially suitable for applications which require Qg,typ 87nC superior power density ... See More ⇒
Detailed specifications: LSB60R125HT, LSB60R170GF, LSB60R170GT, LSB60R180HT, LSB60R280HT, LSB65R041GF, LSB65R041GT, LSB65R070GF, IRF640, LSB65R099GT, LSB65R125HT, LSB65R180GF, LSB65R180GT, LSB65R180HT, LSB65R380HT, LSB80R350GT, LSC55R140GF
Keywords - LSB65R099GF MOSFET specs
LSB65R099GF cross reference
LSB65R099GF equivalent finder
LSB65R099GF pdf lookup
LSB65R099GF substitution
LSB65R099GF replacement
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