LSB65R099GF
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: LSB65R099GF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 278
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 40
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 66
nC
trⓘ -
Время нарастания: 43.8
ns
Cossⓘ - Выходная емкость: 116
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.099
Ohm
Тип корпуса:
TO-247
Аналог (замена) для LSB65R099GF
LSB65R099GF
Datasheet (PDF)
..1. Size:1060K lonten
lsb65r099gf lsd65r099gf lse65r099gf.pdf 
LSB65R099GF/LSD65R099GF/LSE65R099GFLonFETLonten N-channel 650V, 40A, 0.099 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.099DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require Q 66nCg,typ
4.1. Size:940K lonten
lsb65r099gt lsd65r099gt lse65r099gt.pdf 
LSB65R099GT/LSD65R099GT/LSE65R099GT LonFET Lonten N-channel 650V, 40A, 0.099 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.099 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC
7.1. Size:807K lonten
lsb65r041gt.pdf 
LSB65R041GT LonFET Lonten N-channel 650V, 78A, 0.041 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.041 device has extremely low on resistance, making it IDM 230A especially suitable for applications which require Qg,typ 110nC superior power density
7.2. Size:962K lonten
lsb65r070gf.pdf 
LSB65R070GF LonFET Lonten N-channel 650V, 47A, 0.07 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.070 device has extremely low on resistance, making it IDM 141A especially suitable for applications which require Qg,typ 87nC superior power density
7.3. Size:813K lonten
lsb65r041gf.pdf 
LSB65R041GF LonFET Lonten N-channel 650V, 78A, 0.041 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.041 device has extremely low on resistance, making it IDM 230A especially suitable for applications which require Qg,typ 110nC superior power density
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