LSC55R140GF PDF and Equivalents Search

 

LSC55R140GF Specs and Replacement

Type Designator: LSC55R140GF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 205 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 76.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO-220

LSC55R140GF substitution

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LSC55R140GF datasheet

 ..1. Size:1326K  lonten
lsb55r140gf lsc55r140gf lsd55r140gf lse55r140gf lsf55r140gf.pdf pdf_icon

LSC55R140GF

LSB55R140GF/LSC55R140GF/LSD55R140GF/ LSE55R140GF/LSF55R140GF LonFET Lonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 600V DS j,max advanced super junction technology. The resulting R 0.14 DS(on),max device has extremely low on resistance, making it I 69A DM especially suitable for applications which... See More ⇒

 4.1. Size:1326K  lonten
lsb55r140gt lsd55r140gt lse55r140gt lsf55r140gt lsc55r140gt.pdf pdf_icon

LSC55R140GF

LSB55R140GT/LSD55R140GT/LSE55R140GT/ LSF55R140GT/LSC55R140GT LonFET Lonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 600V DS j,max advanced super junction technology. The resulting R 0.14 DS(on),max device has extremely low on resistance, making it I 69A DM especially suitable for applications which... See More ⇒

Detailed specifications: LSB65R099GF, LSB65R099GT, LSB65R125HT, LSB65R180GF, LSB65R180GT, LSB65R180HT, LSB65R380HT, LSB80R350GT, IRF3710, LSC55R140GT, LSC60R105HF, LSC60R125HT, LSC60R180HT, LSC60R280HT, LSC60R290HF, LSC60R650HT, LSC65R125HT

Keywords - LSC55R140GF MOSFET specs

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