LSC55R140GT Datasheet and Replacement
Type Designator: LSC55R140GT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 205 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 76.2 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO-220
LSC55R140GT substitution
LSC55R140GT Datasheet (PDF)
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LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT/LSC55R140GTLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which
lsb55r140gf lsc55r140gf lsd55r140gf lse55r140gf lsf55r140gf.pdf
LSB55R140GF/LSC55R140GF/LSD55R140GF/LSE55R140GF/LSF55R140GFLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which
Datasheet: LSB65R099GT , LSB65R125HT , LSB65R180GF , LSB65R180GT , LSB65R180HT , LSB65R380HT , LSB80R350GT , LSC55R140GF , IRFB4227 , LSC60R105HF , LSC60R125HT , LSC60R180HT , LSC60R280HT , LSC60R290HF , LSC60R650HT , LSC65R125HT , LSC65R180GF .
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