All MOSFET. LSC60R650HT Datasheet

 

LSC60R650HT MOSFET. Datasheet pdf. Equivalent


   Type Designator: LSC60R650HT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.1 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 20.9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO-220

 LSC60R650HT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LSC60R650HT Datasheet (PDF)

 ..1. Size:1295K  lonten
lsc60r650ht lsd60r650ht lsg60r650ht lsh60r650ht.pdf

LSC60R650HT
LSC60R650HT

LSC60R650HT/LSD60R650HT/LSG60R650HT/LSH60R650HTLonFETLonten N-channel 600V, 7A, 0.65 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.65DS(on),maxdevice has extremely low on resistance, making it I 21ADMespecially suitable for applications which require Q 13.1 n

 8.1. Size:1094K  lonten
lsb60r105hf lsd60r105hf lse60r105hf lsc60r105hf.pdf

LSC60R650HT
LSC60R650HT

LSB60R105HF/LSD60R105HF/LSE60R105HF/LSC60R105HFLonFETLonten N-channel 600V, 40A, 0.105 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.105DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require

 8.2. Size:987K  lonten
lsb60r125ht lsc60r125ht lsd60r125ht lse60r125ht.pdf

LSC60R650HT
LSC60R650HT

LSB60R125HT/LSC60R125HT/LSD60R125HT/LSE60R125HT LonFET Lonten N-channel 600V, 25A, 0.125 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.125 device has extremely low on resistance, making it IDM 75A especially suitable for applications which require Qg

 8.3. Size:1336K  lonten
lsd60r280ht lsg60r280ht lsh60r280ht lsb60r280ht lsf60r280ht lse60r280ht lsc60r280ht.pdf

LSC60R650HT
LSC60R650HT

LSD60R280HT/LSG60R280HT/LSH60R280HT/LSB60R280HTLSF60R280HT/ LSE60R280HT/ LSC60R280HTLonFETLonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitab

 8.4. Size:1125K  lonten
lsb60r180ht lsc60r180ht lsd60r180ht lse60r180ht lsf60r180ht lsnc60r180ht.pdf

LSC60R650HT
LSC60R650HT

LSB60R180HT/ LSC60R180HT/ LSD60R180HT / LSE60R180HT/ LSF60R180HT/LSNC60R180HT LonFET Lonten N-channel 600V, 20A, 0.18 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated VDS @ Tj,max 650V using advanced super junction technology. RDS(on),max 0.18 The resulting device has extremely low on IDM 60A resistance, making it especially suitable fo

 8.5. Size:1269K  lonten
lsd60r290hf lsg60r290hf lsh60r290hf lsc60r290hf lsf60r290hf lse60r290hf.pdf

LSC60R650HT
LSC60R650HT

LSD60R290HF/LSG60R290HF/LSH60R290HF//LSC60R290HFLSF60R290HF/ LSE60R290HFLonFETLonten N-channel 600V, 15A, 0.29 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.29DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for appli

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History: SSM3K04FS | BF1210

 

 
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