LSC60R650HT - описание и поиск аналогов

 

LSC60R650HT. Аналоги и основные параметры

Наименование производителя: LSC60R650HT

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 63 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 22 ns

Cossⓘ - Выходная емкость: 20.9 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm

Тип корпуса: TO-220

Аналог (замена) для LSC60R650HT

- подборⓘ MOSFET транзистора по параметрам

 

LSC60R650HT даташит

 ..1. Size:1295K  lonten
 lsc60r650ht lsd60r650ht lsg60r650ht lsh60r650ht.pdf pdf_icon

LSC60R650HT

LSC60R650HT/LSD60R650HT/LSG60R650HT/LSH60R650HT LonFET Lonten N-channel 600V, 7A, 0.65 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.65 DS(on),max device has extremely low on resistance, making it I 21A DM especially suitable for applications which require Q 13.1 n

 8.1. Size:1094K  lonten
 lsb60r105hf lsd60r105hf lse60r105hf lsc60r105hf.pdf pdf_icon

LSC60R650HT

LSB60R105HF/LSD60R105HF/ LSE60R105HF/LSC60R105HF LonFET Lonten N-channel 600V, 40A, 0.105 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.105 DS(on),max device has extremely low on resistance, making it I 120A DM especially suitable for applications which require

 8.2. Size:987K  lonten
 lsb60r125ht lsc60r125ht lsd60r125ht lse60r125ht.pdf pdf_icon

LSC60R650HT

LSB60R125HT/LSC60R125HT/LSD60R125HT/LSE60R125HT LonFET Lonten N-channel 600V, 25A, 0.125 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.125 device has extremely low on resistance, making it IDM 75A especially suitable for applications which require Qg

 8.3. Size:1336K  lonten
 lsd60r280ht lsg60r280ht lsh60r280ht lsb60r280ht lsf60r280ht lse60r280ht lsc60r280ht.pdf pdf_icon

LSC60R650HT

LSD60R280HT/LSG60R280HT/LSH60R280HT/LSB60R280HT LSF60R280HT/ LSE60R280HT/ LSC60R280HT LonFET Lonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.28 DS(on),max device has extremely low on resistance, making it I 45A DM especially suitab

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History: LSC65R180GF | MDP9N50TH | SVT25600NT | AP2306GN | CJQ4406 | WSF4012 | AOD3N80

 

 

 

 

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