All MOSFET. LSC80R350GT Datasheet

 

LSC80R350GT MOSFET. Datasheet pdf. Equivalent


   Type Designator: LSC80R350GT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 39 nC
   trⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO-220

 LSC80R350GT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LSC80R350GT Datasheet (PDF)

 ..1. Size:1197K  lonten
lsb80r350gt lsc80r350gt lsd80r350gt lse80r350gt lsf80r350gt.pdf

LSC80R350GT
LSC80R350GT

LSB80R350GT /LSC80R350GT/LSD80R350GT/LSE80R350GT/LSF80R350GTLonFETLonten N-channel 800V, 15A, 0.35 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The R 0.35DS(on),maxresulting device has extremely low on resistance, I 45ADMmaking it especially suitable for applications which

 8.1. Size:1396K  lonten
lsc80r680gt lsd80r680gt lse80r680gt lsf80r680gt lsg80r680gt lsh80r680gt.pdf

LSC80R350GT
LSC80R350GT

LSC80R680GT/LSD80R680GT/LSE80R680GT/LSF80R680GT/LSG80R680GT/LSH80R680GTLonFETLonten N-channel 800V, 8A, 0.68 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The resulting R 0.68DS(on),maxdevice has extremely low on resistance, making it I 8ADMespecially suitable for applicat

 8.2. Size:1307K  lonten
lsc80r980gt lsd80r980gt lse80r980gt lsf80r980gt lsg80r980gt lsh80r980gt.pdf

LSC80R350GT
LSC80R350GT

LSC80R980GT/LSD80R980GT/LSE80R980GT/LSF80R980GT/LSG80R980GT/LSH80R980GTLonFETLonten N-channel 800V, 5A, 0.98 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The resulting R 0.98DS(on),maxdevice has extremely low on resistance, making it I 5ADMespecially suitable for applicat

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: NDP5060

 

 
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