All MOSFET. STP20N10FI Datasheet

 

STP20N10FI MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP20N10FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: ISOWATT220

 STP20N10FI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP20N10FI Datasheet (PDF)

 6.1. Size:379K  st
 stp20n10l.pdf

STP20N10FI STP20N10FI

STP20N10LSTP20N10LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP20N10L 100 V

 6.2. Size:343K  st
 stp20n10.pdf

STP20N10FI STP20N10FI

STP20N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP20N10 100 V

 6.3. Size:140K  st
 stp20n10-.pdf

STP20N10FI STP20N10FI

STP20N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP20N10 100 V

 6.4. Size:260K  inchange semiconductor
 stp20n10l.pdf

STP20N10FI STP20N10FI

isc N-Channel MOSFET Transistor STP20N10LFEATURESWith TO-220 packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Datasheet: STP18N10FI , STP19N06 , STP19N06FI , STP19N06L , STP19N06LFI , STP20N06 , STP20N06FI , STP20N10 , IRFP250 , STP20N10L , STP20N10LFI , STP21N05L , STP21N05LFI , STP21N06L , STP21N06LFI , STP25N05 , STP25N05FI .

History: 2N6757

 

 
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