LSE50R160HT MOSFET. Datasheet pdf. Equivalent
Type Designator: LSE50R160HT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19 nC
Rise Time (tr): 34.5 nS
Drain-Source Capacitance (Cd): 46.3 pF
Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
Package: TO-263
LSE50R160HT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LSE50R160HT Datasheet (PDF)
..1. Size:1107K lonten
lsd50r160ht lsg50r160ht lsh50r160ht lsf50r160ht lse50r160ht.pdf
lsd50r160ht lsg50r160ht lsh50r160ht lsf50r160ht lse50r160ht.pdf
LSD50R160HT/LSG50R160HT/LSH50R160HT/LSF50R160HT/LSE50R160HTLonFETLonten N-channel 500V, 20A, 0.16 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 550VDS j,maxadvanced super junction technology. The resulting R 0.16DS(on),maxdevice has extremely low on resistance, making it I 60ADMespecially suitable for applications which r
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