LSE55R140GF MOSFET. Datasheet pdf. Equivalent
Type Designator: LSE55R140GF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 205 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 23 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 40 nC
Rise Time (tr): 35 nS
Drain-Source Capacitance (Cd): 76.2 pF
Maximum Drain-Source On-State Resistance (Rds): 0.14 Ohm
Package: TO-263
LSE55R140GF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LSE55R140GF Datasheet (PDF)
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LSB55R140GF/LSC55R140GF/LSD55R140GF/LSE55R140GF/LSF55R140GFLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which
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LSB55R140GF/LSD55R140GF/LSE55R140GFLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which require Q 40nCg,typsu
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LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT/LSC55R140GTLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which
lsb55r140gt lsd55r140gt lse55r140gt lsf55r140gt.pdf
LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GTLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which require Q 40n
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LSB55R066GT/LSD55R066GT/LSE55R066GT LonFET Lonten N-channel 550V, 45A, 0.066 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 600V advanced super junction technology. The resulting RDS(on),max 0.066 device has extremely low on resistance, making it IDM 135A especially suitable for applications which require Qg,typ 63.5 n
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