Справочник MOSFET. LSE55R140GF

 

LSE55R140GF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: LSE55R140GF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 205 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 550 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 76.2 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.14 Ohm
   Тип корпуса: TO-263
 

 Аналог (замена) для LSE55R140GF

   - подбор ⓘ MOSFET транзистора по параметрам

 

LSE55R140GF Datasheet (PDF)

 ..1. Size:1326K  lonten
 lsb55r140gf lsc55r140gf lsd55r140gf lse55r140gf lsf55r140gf.pdf pdf_icon

LSE55R140GF

LSB55R140GF/LSC55R140GF/LSD55R140GF/LSE55R140GF/LSF55R140GFLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which

 ..2. Size:1193K  lonten
 lsb55r140gf lsd55r140gf lse55r140gf.pdf pdf_icon

LSE55R140GF

LSB55R140GF/LSD55R140GF/LSE55R140GFLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which require Q 40nCg,typsu

 4.1. Size:1326K  lonten
 lsb55r140gt lsd55r140gt lse55r140gt lsf55r140gt lsc55r140gt.pdf pdf_icon

LSE55R140GF

LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT/LSC55R140GTLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which

 4.2. Size:1268K  lonten
 lsb55r140gt lsd55r140gt lse55r140gt lsf55r140gt.pdf pdf_icon

LSE55R140GF

LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GTLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which require Q 40n

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... LSDN55R140GT , LSDN60R950HT , LSDN65R380GT , LSDN65R380HT , LSDN65R650HT , LSDN65R950HT , LSE50R160HT , LSE55R066GT , 2N7002 , LSE55R140GT , LSE60R092GF , LSE60R092GT , LSE60R099HT , LSE60R105HF , LSE60R125HT , LSE60R180HT , LSE60R1K4HT .

History: RTL020P02FRA | JCS5AN50V | AP99LT06GI-HF | AM2359PE | LSB60R030HT | HGI200N10SL | BUK9507-30B

 

 
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