LSE60R099HT MOSFET. Datasheet pdf. Equivalent

   Type Designator: LSE60R099HT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 248 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 48 nC
   trⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 106 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO-263

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LSE60R099HT Datasheet (PDF)

..1. Size:1047K lonten
lsb60r099ht lsd60r099ht lse60r099ht.pdf pdf_icon

LSB60R099HT/LSD60R099HT/LSE60R099HTLonFETLonten N-channel 600V, 40A, 0.099 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.099DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require Q 48nCg,typ

6.1. Size:934K lonten
lsb60r092gf lsd60r092gf lse60r092gf.pdf pdf_icon

LSB60R092GF/LSD60R092GF/LSE60R092GF LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC

6.2. Size:941K lonten
lsb60r092gt lsd60r092gt lse60r092gt.pdf pdf_icon

LSB60R092GT/LSD60R092GT/LSE60R092GT LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC

8.1. Size:1094K lonten
lsb60r105hf lsd60r105hf lse60r105hf lsc60r105hf.pdf pdf_icon

LSB60R105HF/LSD60R105HF/LSE60R105HF/LSC60R105HFLonFETLonten N-channel 600V, 40A, 0.105 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.105DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require

8.2. Size:1260K lonten
lsd60r380ht lsg60r380ht lsh60r380ht lsf60r380ht lse60r380ht.pdf pdf_icon

LSD60R380HT/LSG60R380HT/LSH60R380HT/LSF60R380HT/ LSE60R380HTLonFETLonten N-channel 600V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which

8.3. Size:1293K lonten
lsd60r280ht lsg60r280ht lsh60r280ht lsf60r280ht lse60r280ht lsb60r280ht.pdf pdf_icon

LSD60R280HT/LSG60R280HT/LSH60R280HT/LSF60R280HT/ LSE60R280HT/ LSB60R280HTLonFETLonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for appl

8.4. Size:987K lonten
lsb60r125ht lsc60r125ht lsd60r125ht lse60r125ht.pdf pdf_icon

LSB60R125HT/LSC60R125HT/LSD60R125HT/LSE60R125HT LonFET Lonten N-channel 600V, 25A, 0.125 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.125 device has extremely low on resistance, making it IDM 75A especially suitable for applications which require Qg

8.5. Size:1336K lonten
lsd60r280ht lsg60r280ht lsh60r280ht lsb60r280ht lsf60r280ht lse60r280ht lsc60r280ht.pdf pdf_icon

LSD60R280HT/LSG60R280HT/LSH60R280HT/LSB60R280HTLSF60R280HT/ LSE60R280HT/ LSC60R280HTLonFETLonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitab

8.6. Size:1125K lonten
lsb60r180ht lsc60r180ht lsd60r180ht lse60r180ht lsf60r180ht lsnc60r180ht.pdf pdf_icon

LSB60R180HT/ LSC60R180HT/ LSD60R180HT / LSE60R180HT/ LSF60R180HT/LSNC60R180HT LonFET Lonten N-channel 600V, 20A, 0.18 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated VDS @ Tj,max 650V using advanced super junction technology. RDS(on),max 0.18 The resulting device has extremely low on IDM 60A resistance, making it especially suitable fo

8.7. Size:1103K lonten
lsd60r1k4ht lsg60r1k4ht lsh60r1k4ht lse60r1k4ht.pdf pdf_icon

LSD60R1K4HT/LSG60R1K4HT/ LSH60R1K4HT/ LSE60R1K4HTLonFETLonten N-channel 600V, 3A, 1.4 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 1.4DS(on),maxdevice has extremely low on resistance, making it I 9ADMespecially suitable for applications which require Q 5.8nC

8.8. Size:1313K lonten
lsd60r280ht lsg60r280ht lsh60r280ht lsf60r280htlse60r280ht lsb60r280ht.pdf pdf_icon

8.9. Size:1227K lonten
lsd60r240ht lsg60r240ht lsh60r240ht lsf60r240ht lse60r240ht.pdf pdf_icon

LSD60R240HT/LSG60R240HT/LSH60R240HT/LSF60R240HT/ LSE60R240HTLonFETLonten N-channel 600V, 17A, 0.24 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.24DS(on),maxdevice has extremely low on resistance, making it I 50ADMespecially suitable for applications which

8.10. Size:1269K lonten
lsd60r290hf lsg60r290hf lsh60r290hf lsc60r290hf lsf60r290hf lse60r290hf.pdf pdf_icon

LSD60R290HF/LSG60R290HF/LSH60R290HF//LSC60R290HFLSF60R290HF/ LSE60R290HFLonFETLonten N-channel 600V, 15A, 0.29 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.29DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for appli

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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LSE60R099HT MOSFET. Datasheet pdf. Equivalent

LSE60R099HT Datasheet (PDF)

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