Справочник MOSFET. LSE60R099HT

 

LSE60R099HT Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: LSE60R099HT
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 248 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 58 ns
   Cossⓘ - Выходная емкость: 106 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.099 Ohm
   Тип корпуса: TO-263
 

 Аналог (замена) для LSE60R099HT

   - подбор ⓘ MOSFET транзистора по параметрам

 

LSE60R099HT Datasheet (PDF)

 ..1. Size:1047K  lonten
 lsb60r099ht lsd60r099ht lse60r099ht.pdf pdf_icon

LSE60R099HT

LSB60R099HT/LSD60R099HT/LSE60R099HTLonFETLonten N-channel 600V, 40A, 0.099 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.099DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require Q 48nCg,typ

 6.1. Size:934K  lonten
 lsb60r092gf lsd60r092gf lse60r092gf.pdf pdf_icon

LSE60R099HT

LSB60R092GF/LSD60R092GF/LSE60R092GF LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC

 6.2. Size:941K  lonten
 lsb60r092gt lsd60r092gt lse60r092gt.pdf pdf_icon

LSE60R099HT

LSB60R092GT/LSD60R092GT/LSE60R092GT LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC

 8.1. Size:1094K  lonten
 lsb60r105hf lsd60r105hf lse60r105hf lsc60r105hf.pdf pdf_icon

LSE60R099HT

LSB60R105HF/LSD60R105HF/LSE60R105HF/LSC60R105HFLonFETLonten N-channel 600V, 40A, 0.105 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.105DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... LSDN65R650HT , LSDN65R950HT , LSE50R160HT , LSE55R066GT , LSE55R140GF , LSE55R140GT , LSE60R092GF , LSE60R092GT , 5N50 , LSE60R105HF , LSE60R125HT , LSE60R180HT , LSE60R1K4HT , LSE60R240HT , LSE60R280HT , LSE60R290HF , LSE60R380HT .

History: JCS620CT | YJD50N03A | 25N10L-TF3-T | MME70R380PRH | IRFP440R | QS8M51 | CS12N65FA9R

 

 
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