All MOSFET. STP21N05L Datasheet

 

STP21N05L MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP21N05L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 370 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO220

 STP21N05L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP21N05L Datasheet (PDF)

 ..1. Size:383K  st
 stp21n05l.pdf

STP21N05L STP21N05L

STP21N05LSTP21N05LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP21N05L 50 V

 6.1. Size:197K  st
 stp21n05.pdf

STP21N05L STP21N05L

STP21N05LSTP21N05LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP21N05L 50 V

 7.1. Size:197K  st
 stp21n06.pdf

STP21N05L STP21N05L

STP21N06LSTP21N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP21N06L 60 V

 7.2. Size:383K  st
 stp21n06l.pdf

STP21N05L STP21N05L

STP21N06LSTP21N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP21N06L 60 V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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