LSE70R380GT MOSFET. Datasheet pdf. Equivalent
Type Designator: LSE70R380GT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 25 nC
Rise Time (tr): 28 nS
Drain-Source Capacitance (Cd): 40.5 pF
Maximum Drain-Source On-State Resistance (Rds): 0.38 Ohm
Package: TO-263
LSE70R380GT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LSE70R380GT Datasheet (PDF)
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LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT LonFET Lonten N-channel 700V, 11A, 0.45 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 750V advanced super junction technology. The RDS(on),max 0.45 resulting device has extremely low on resistance, IDM 30A making it especially suitable for applications which
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