All MOSFET. STP21N06LFI Datasheet

 

STP21N06LFI Datasheet and Replacement


   Type Designator: STP21N06LFI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 18 nC
   tr ⓘ - Rise Time: 370 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: ISOWATT220
 

 STP21N06LFI substitution

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STP21N06LFI Datasheet (PDF)

 5.1. Size:383K  st
 stp21n06l.pdf pdf_icon

STP21N06LFI

STP21N06LSTP21N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP21N06L 60 V

 6.1. Size:197K  st
 stp21n06.pdf pdf_icon

STP21N06LFI

STP21N06LSTP21N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP21N06L 60 V

 7.1. Size:197K  st
 stp21n05.pdf pdf_icon

STP21N06LFI

STP21N05LSTP21N05LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP21N05L 50 V

 7.2. Size:383K  st
 stp21n05l.pdf pdf_icon

STP21N06LFI

STP21N05LSTP21N05LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP21N05L 50 V

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Keywords - STP21N06LFI MOSFET datasheet

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