All MOSFET. STP21N06LFI Datasheet

 

STP21N06LFI MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP21N06LFI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 370 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: ISOWATT220

 STP21N06LFI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP21N06LFI Datasheet (PDF)

 5.1. Size:383K  st
 stp21n06l.pdf

STP21N06LFI STP21N06LFI

STP21N06LSTP21N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP21N06L 60 V

 6.1. Size:197K  st
 stp21n06.pdf

STP21N06LFI STP21N06LFI

STP21N06LSTP21N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP21N06L 60 V

 7.1. Size:197K  st
 stp21n05.pdf

STP21N06LFI STP21N06LFI

STP21N05LSTP21N05LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP21N05L 50 V

 7.2. Size:383K  st
 stp21n05l.pdf

STP21N06LFI STP21N06LFI

STP21N05LSTP21N05LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP21N05L 50 V

Datasheet: STP20N06FI , STP20N10 , STP20N10FI , STP20N10L , STP20N10LFI , STP21N05L , STP21N05LFI , STP21N06L , IRFZ24N , STP25N05 , STP25N05FI , STP25N06 , STP25N06FI , STP2N60 , STP2N60FI , STP2N80 , STP2N80FI .

 

 
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