LSGD04R035 PDF and Equivalents Search

 

LSGD04R035 Specs and Replacement

Type Designator: LSGD04R035

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.5 nS

Cossⓘ - Output Capacitance: 639 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: TO-220F

LSGD04R035 substitution

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LSGD04R035 datasheet

 ..1. Size:933K  lonten
 lsgc04r035 lsgd04r035 lsge04r035 lsgg04r035 lsgh04r035 lsgn04r035.pdf pdf_icon

LSGD04R035

LSGC04R035/LSGD04R035/LSGE04R035/ LSGG04R035/LSGH04R035/LSGN04R035 Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 3.5m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance... See More ⇒

Detailed specifications: LSGC04R025, LSGC04R029, LSGC04R035, LSGC06R034W3, LSGC085R041W3, LSGC085R065W3, LSGC10R080W3, LSGC15R085W3, IRF830, LSGD10R080W3, LSGE04R035, LSGE06R034W3, LSGE085R041W3, LSGE085R065W3, LSGE10R080W3, LSGE15R085W3, LSGG03R020

Keywords - LSGD04R035 MOSFET specs

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