LSGE085R065W3 PDF and Equivalents Search

 

LSGE085R065W3 Specs and Replacement

Type Designator: LSGE085R065W3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 138 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 601 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO-263

LSGE085R065W3 substitution

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LSGE085R065W3 datasheet

 ..1. Size:1291K  lonten
lsgc085r065w3 lsge085r065w3 lsgn085r065w3.pdf pdf_icon

LSGE085R065W3

LSGC085R065W3 LSGE085R065W3 LSGN085R065W3 Lonten N-channel 85 V, 80A, 6.5m Power MOSFET Features Product Summary VDS 85V Extremely low on-resistance R DS(on) RDS(on) 6.5m Excellent Q xR product(FOM) g DS(on) I D 80A Qualified according to JEDEC criteria Applications Motor control and drive 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 10... See More ⇒

 5.1. Size:806K  lonten
lsgc085r041w3 lsge085r041w3.pdf pdf_icon

LSGE085R065W3

LSGC085R041W3 LSGE085R041W3 Lonten N-channel 85 V, 120A, 4.1m Power MOSFET Features Product Summary VDS 85V Extremely low on-resistance R DS(on) RDS(on) 3.4m Excellent Q xR product(FOM) g DS(on) I D 120A Qualified according to JEDEC criteria Applications Motor control and drive 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche... See More ⇒

 9.1. Size:813K  lonten
lsgc06r034w3 lsge06r034w3 lsgn06r034w3 lsgg06r034w3.pdf pdf_icon

LSGE085R065W3

LSGC06R034W3 LSGE06R034W3 LSGN06R034W3 LSGG06R034W3 Lonten N-channel 60 V, 80 A, 3.4m Power MOSFET Features Product Summary VDS 60V Extremely low on-resistance R DS(on) RDS(on)@10V typ 2.8m Excellent Q xR product(FOM) g DS(on) RDS(on)@4.5V typ 3.6m Qualified according to JEDEC criteria I D 80A Applications Synchronous Rectification for AC/DC QuickCharger 1... See More ⇒

 9.2. Size:933K  lonten
lsgc04r035 lsgd04r035 lsge04r035 lsgg04r035 lsgh04r035 lsgn04r035.pdf pdf_icon

LSGE085R065W3

LSGC04R035/LSGD04R035/LSGE04R035/ LSGG04R035/LSGH04R035/LSGN04R035 Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 3.5m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance... See More ⇒

Detailed specifications: LSGC085R065W3, LSGC10R080W3, LSGC15R085W3, LSGD04R035, LSGD10R080W3, LSGE04R035, LSGE06R034W3, LSGE085R041W3, K2611, LSGE10R080W3, LSGE15R085W3, LSGG03R020, LSGG04R028, LSGG04R029, LSGG04R035, LSGG06R034W3, LSGG06R098W3

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