LSGE085R065W3 MOSFET. Datasheet pdf. Equivalent
Type Designator: LSGE085R065W3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 138 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 55 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 601 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO-263
LSGE085R065W3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LSGE085R065W3 Datasheet (PDF)
lsgc085r065w3 lsge085r065w3 lsgn085r065w3.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
LSGC085R065W3\LSGE085R065W3\LSGN085R065W3Lonten N-channel 85 V, 80A, 6.5m Power MOSFETFeatures Product SummaryVDS 85V Extremely low on-resistance RDS(on)RDS(on) 6.5m Excellent Q xR product(FOM)g DS(on)ID 80A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested10
lsgc085r041w3 lsge085r041w3.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
LSGC085R041W3\LSGE085R041W3Lonten N-channel 85 V, 120A, 4.1m Power MOSFETFeatures Product SummaryVDS 85V Extremely low on-resistance RDS(on)RDS(on) 3.4m Excellent Q xR product(FOM)g DS(on)ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche
lsgc06r034w3 lsge06r034w3 lsgn06r034w3 lsgg06r034w3.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
LSGC06R034W3\LSGE06R034W3\LSGN06R034W3\LSGG06R034W3Lonten N-channel 60 V, 80 A, 3.4m Power MOSFETFeatures Product SummaryVDS 60V Extremely low on-resistance RDS(on)RDS(on)@10V typ 2.8m Excellent Q xR product(FOM)g DS(on)RDS(on)@4.5V typ 3.6m Qualified according to JEDEC criteriaID 80AApplications Synchronous Rectification for AC/DC QuickCharger1
lsgc04r035 lsgd04r035 lsge04r035 lsgg04r035 lsgh04r035 lsgn04r035.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
LSGC04R035/LSGD04R035/LSGE04R035/LSGG04R035/LSGH04R035/LSGN04R035Lonten N-channel 40V, 120A, 3.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 3.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
![LSGE085R065W3](https://alltransistors.com/images/us.png)
![LSGE085R065W3](https://alltransistors.com/images/es.png)
![LSGE085R065W3](https://alltransistors.com/images/ru.png)
LIST
Last Update
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C