All MOSFET. LSGG10R085W3 Datasheet

 

LSGG10R085W3 Datasheet and Replacement


   Type Designator: LSGG10R085W3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 453 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-252
 

 LSGG10R085W3 substitution

   - MOSFET ⓘ Cross-Reference Search

 

LSGG10R085W3 Datasheet (PDF)

 ..1. Size:795K  lonten
 lsgg10r085w3 lsgh10r085w3.pdf pdf_icon

LSGG10R085W3

LSGG10R085W3\LSGH10R085W3Lonten N-channel 100V, 65A, 8.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 100VDSSeffect transistors are using split gate trench DMOS R GSDS(on).max@ V =10V 8.5mtechnology. This advanced technology has been I 65ADespecially tailored to minimize on-state resistance,provide superior switching performance,

Datasheet: LSGE15R085W3 , LSGG03R020 , LSGG04R028 , LSGG04R029 , LSGG04R035 , LSGG06R034W3 , LSGG06R098W3 , LSGG08R060W3 , IRFZ44N , LSGH04R028 , LSGH04R029 , LSGH04R035 , LSGH08R060W3 , LSGH10R085W3 , LSGN03R020 , LSGN04R025 , LSGN04R029 .

History: GSM6506S | BL4N150-B | HM75N80 | GSM6424 | NCE70N900I | CS5N65A3 | TPCA8008-H

Keywords - LSGG10R085W3 MOSFET datasheet

 LSGG10R085W3 cross reference
 LSGG10R085W3 equivalent finder
 LSGG10R085W3 lookup
 LSGG10R085W3 substitution
 LSGG10R085W3 replacement

 

 
Back to Top

 


 
.