LSGG10R085W3 MOSFET. Datasheet pdf. Equivalent
Type Designator: LSGG10R085W3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 96 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V
Maximum Drain Current |Id|: 65 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 45 nC
Rise Time (tr): 63 nS
Drain-Source Capacitance (Cd): 453 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0085 Ohm
Package: TO-252
LSGG10R085W3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LSGG10R085W3 Datasheet (PDF)
lsgg10r085w3 lsgh10r085w3.pdf
LSGG10R085W3\LSGH10R085W3Lonten N-channel 100V, 65A, 8.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 100VDSSeffect transistors are using split gate trench DMOS R GSDS(on).max@ V =10V 8.5mtechnology. This advanced technology has been I 65ADespecially tailored to minimize on-state resistance,provide superior switching performance,
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
