LSGG10R085W3 PDF and Equivalents Search

 

LSGG10R085W3 Specs and Replacement

Type Designator: LSGG10R085W3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 63 nS

Cossⓘ - Output Capacitance: 453 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO-252

LSGG10R085W3 substitution

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LSGG10R085W3 datasheet

 ..1. Size:795K  lonten
 lsgg10r085w3 lsgh10r085w3.pdf pdf_icon

LSGG10R085W3

LSGG10R085W3 LSGH10R085W3 Lonten N-channel 100V, 65A, 8.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 100V DSS effect transistors are using split gate trench DMOS R GS DS(on).max@ V =10V 8.5m technology. This advanced technology has been I 65A D especially tailored to minimize on-state resistance, provide superior switching performance,... See More ⇒

Detailed specifications: LSGE15R085W3, LSGG03R020, LSGG04R028, LSGG04R029, LSGG04R035, LSGG06R034W3, LSGG06R098W3, LSGG08R060W3, IRFZ44N, LSGH04R028, LSGH04R029, LSGH04R035, LSGH08R060W3, LSGH10R085W3, LSGN03R020, LSGN04R025, LSGN04R029

Keywords - LSGG10R085W3 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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