All MOSFET. LSGH04R035 Datasheet

 

LSGH04R035 MOSFET. Datasheet pdf. Equivalent


   Type Designator: LSGH04R035
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 85.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 33.8 nC
   trⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 639 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO-251

 LSGH04R035 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LSGH04R035 Datasheet (PDF)

 ..1. Size:933K  lonten
 lsgc04r035 lsgd04r035 lsge04r035 lsgg04r035 lsgh04r035 lsgn04r035.pdf

LSGH04R035 LSGH04R035

LSGC04R035/LSGD04R035/LSGE04R035/LSGG04R035/LSGH04R035/LSGN04R035Lonten N-channel 40V, 120A, 3.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 3.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance

 6.1. Size:771K  lonten
 lsgg04r028 lsgh04r028.pdf

LSGH04R035 LSGH04R035

LSGG04R028/LSGH04R028Lonten N-channel 40V, 120A, 2.8m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.8mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching performance, and

 6.2. Size:1070K  lonten
 lsgc04r029 lsgg04r029 lsgh04r029 lsgn04r029.pdf

LSGH04R035 LSGH04R035

LSGC04R029/LSGG04R029/LSGH04R029/LSGN04R029Lonten N-channel 40V, 120A, 2.9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.9mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior swit

 9.1. Size:765K  lonten
 lsgh08r060w3 lsgg08r060w3.pdf

LSGH04R035 LSGH04R035

LSGH08R060W3/LSGG08R060W3Lonten N-channel 85V, 80A, 6.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 85VDSSeffect transistors are using split gate trench DMOS R GSDS(on).max@ V =10V 6.0mtechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance, a

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top