LSGH04R035 - Даташиты. Аналоги. Основные параметры
Наименование производителя: LSGH04R035
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 85.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 4.5 ns
Cossⓘ - Выходная емкость: 639 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
Тип корпуса: TO-251
Аналог (замена) для LSGH04R035
LSGH04R035 Datasheet (PDF)
lsgc04r035 lsgd04r035 lsge04r035 lsgg04r035 lsgh04r035 lsgn04r035.pdf

LSGC04R035/LSGD04R035/LSGE04R035/LSGG04R035/LSGH04R035/LSGN04R035Lonten N-channel 40V, 120A, 3.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 3.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance
lsgg04r028 lsgh04r028.pdf

LSGG04R028/LSGH04R028Lonten N-channel 40V, 120A, 2.8m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.8mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching performance, and
lsgc04r029 lsgg04r029 lsgh04r029 lsgn04r029.pdf

LSGC04R029/LSGG04R029/LSGH04R029/LSGN04R029Lonten N-channel 40V, 120A, 2.9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.9mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior swit
lsgh08r060w3 lsgg08r060w3.pdf

LSGH08R060W3/LSGG08R060W3Lonten N-channel 85V, 80A, 6.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 85VDSSeffect transistors are using split gate trench DMOS R GSDS(on).max@ V =10V 6.0mtechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance, a
Другие MOSFET... LSGG04R029 , LSGG04R035 , LSGG06R034W3 , LSGG06R098W3 , LSGG08R060W3 , LSGG10R085W3 , LSGH04R028 , LSGH04R029 , IRF840 , LSGH08R060W3 , LSGH10R085W3 , LSGN03R020 , LSGN04R025 , LSGN04R029 , LSGN04R035 , LSGN06R034W3 , LSGN06R098W3 .
History: 2SJ345 | 8N65KL-TF3-T | DHESJ11N65
History: 2SJ345 | 8N65KL-TF3-T | DHESJ11N65



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