LSGN04R025 Datasheet and Replacement
Type Designator: LSGN04R025
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 57.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 2130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: PPAK5X6
LSGN04R025 substitution
LSGN04R025 Datasheet (PDF)
lsgn04r025.pdf
LSGN04R025/LSGC04R025Lonten N-channel 40V, 120A, 2.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching performance, and
lsgn04r025 lsgc04r025.pdf
LSGN04R025/LSGC04R025Lonten N-channel 40V, 120A, 2.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching performance, and
lsgn04r029.pdf
LSGC04R029/LSGG04R029/LSGH04R029/LSGN04R029Lonten N-channel 40V, 120A, 2.9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.9mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior swit
lsgc04r029 lsgg04r029 lsgh04r029 lsgn04r029.pdf
LSGC04R029/LSGG04R029/LSGH04R029/LSGN04R029Lonten N-channel 40V, 120A, 2.9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.9mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior swit
Datasheet: LSGG08R060W3 , LSGG10R085W3 , LSGH04R028 , LSGH04R029 , LSGH04R035 , LSGH08R060W3 , LSGH10R085W3 , LSGN03R020 , 50N06 , LSGN04R029 , LSGN04R035 , LSGN06R034W3 , LSGN06R098W3 , LSGN085R065W3 , LSGN10R085W3 , LSH50R160HT , LSH60R1K4HT .
History: R6009KNJ | JMSL0402AK | DG4N60 | MIC94052BC6TR | BSS127 | SKI03036 | 2SK844
Keywords - LSGN04R025 MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: R6009KNJ | JMSL0402AK | DG4N60 | MIC94052BC6TR | BSS127 | SKI03036 | 2SK844
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