LSH50R160HT Specs and Replacement
Type Designator: LSH50R160HT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 34.5 nS
Cossⓘ - Output Capacitance: 46.3 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO-251
LSH50R160HT substitution
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LSH50R160HT datasheet
lsd50r160ht lsg50r160ht lsh50r160ht lsf50r160ht lse50r160ht.pdf
LSD50R160HT/LSG50R160HT/LSH50R160HT/LSF50R160HT/LSE50R160HT LonFET Lonten N-channel 500V, 20A, 0.16 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 550V DS j,max advanced super junction technology. The resulting R 0.16 DS(on),max device has extremely low on resistance, making it I 60A DM especially suitable for applications which r... See More ⇒
Detailed specifications: LSGN03R020, LSGN04R025, LSGN04R029, LSGN04R035, LSGN06R034W3, LSGN06R098W3, LSGN085R065W3, LSGN10R085W3, IRF640N, LSH60R1K4HT, LSH60R240HT, LSH60R280HT, LSH60R290HF, LSH60R2K5HT, LSH60R380HT, LSH60R650HT, LSH60R950HT
Keywords - LSH50R160HT MOSFET specs
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