LSS65R1K5HT MOSFET. Datasheet pdf. Equivalent
Type Designator: LSS65R1K5HT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 18 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.8 nC
trⓘ - Rise Time: 26.8 nS
Cossⓘ - Output Capacitance: 10.6 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: SOT223
LSS65R1K5HT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LSS65R1K5HT Datasheet (PDF)
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LSD65R1K5HT/LSG65R1K5HT/ LSH65R1K5HT/ LSE65R1K5HT/ LSS65R1K5HTLonFETLonten N-channel 650V, 3A, 1.5 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 1.5DS(on),maxdevice has extremely low on resistance, making it I 9ADMespecially suitable for applications which re
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