AO4803-MS Specs and Replacement
Type Designator: AO4803-MS
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: SOP8
AO4803-MS substitution
- MOSFET ⓘ Cross-Reference Search
AO4803-MS datasheet
ao4803-ms.pdf
www.msksemi.com AO4803-MS Semiconductor Compiance Product Summary SOP-8 VDS -30V I (at V =-10V) -5A D GS R (at V =-10V) ... See More ⇒
ao4803.pdf
AO4803 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO4803 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ID (at VGS=-10V) -5A suitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V) ... See More ⇒
ao4803a.pdf
AO4803A 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO4803A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -5A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V) ... See More ⇒
ao4803.pdf
SMD Type MOSFET Dual P-Channel MOSFET AO4803 (KO4803) SOP-8 Unit mm Features VDS (V) = -30V ID = -5 A (VGS = -10V) 1.50 0.15 RDS(ON) 52m (VGS = -10V) RDS(ON) 87m (VGS = -4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D D D D G1 G2 G1 G2 S1 S2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Volt... See More ⇒
Detailed specifications: LSNC60R180HT, LSNC65R125HT, LSNC65R180HT, LSNC65R380HT, LSS65R1K5HT, AO3400MI-MS, AO3401MI-MS, AO3415AI-MS, IRFB3607, AO4812-MS, AO4842-MS, AO4882-MS, AO4884-MS, MMFTN3019E-MS, SI2301AI-MS, SI2302AI-MS, WPM2015-MS
Keywords - AO4803-MS MOSFET specs
AO4803-MS cross reference
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