AO4803-MS MOSFET. Datasheet pdf. Equivalent
Type Designator: AO4803-MS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.2 nC
trⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: SOP8
AO4803-MS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO4803-MS Datasheet (PDF)
ao4803-ms.pdf
www.msksemi.comAO4803-MSSemiconductor CompianceProduct SummarySOP-8VDS-30VI (at V =-10V) -5AD GSR (at V =-10V)
ao4803.pdf
AO480330V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4803 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device is ID (at VGS=-10V) -5Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V)
ao4803a.pdf
AO4803A30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4803A uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -5Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)
ao4803.pdf
SMD Type MOSFETDual P-Channel MOSFETAO4803 (KO4803)SOP-8 Unit:mm Features VDS (V) = -30V ID = -5 A (VGS = -10V)1.50 0.15 RDS(ON) 52m (VGS = -10V) RDS(ON) 87m (VGS = -4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D DD DG1 G2G1 G2S1 S2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Volt
ao4803a.pdf
SMD Type MOSFETDual P-Channel MOSFETAO4803A (KO4803A)SOP-8 Unit:mm Features VDS (V) = -30V1.50 0.15 ID = -5 A (VGS = -10V) RDS(ON) 46m (VGS = -10V) RDS(ON) 74m (VGS = -4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D DD DG1 G2G1 G2S1 S2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Vo
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