AO4884-MS Specs and Replacement
Type Designator: AO4884-MS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 109 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP8
AO4884-MS substitution
- MOSFET ⓘ Cross-Reference Search
AO4884-MS datasheet
ao4884-ms.pdf
www.msksemi.com AO4884-MS Semiconductor Compiance D1 D1 D2 D2 General Features S1 G1 S2 V = 40V I =10A DS D G2 R ... See More ⇒
ao4884.pdf
AO4884 40V Dual N-Channel MOSFET General Description Product Summary VDS 40V The AO4884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all ID (at VGS=10V) 10A purpose device that is suitable for use in a wide range of RDS(ON) (at VGS=10V) ... See More ⇒
ao4884.pdf
SMD Type MOSFET Dual N-Channel MOSFET AO4884 (KO4884) SOP-8 Unit mm Features VDS (V) = 40V ID = 10A (VGS = 10V) 1.50 0.15 RDS(ON) 13m (VGS = 10V) RDS(ON) 16m (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 40 V Gat... See More ⇒
ao4884.pdf
AO4884 www.VBsemi.tw Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.010 at VGS = 10 V 12 40 5.9 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 10 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch... See More ⇒
Detailed specifications: LSS65R1K5HT, AO3400MI-MS, AO3401MI-MS, AO3415AI-MS, AO4803-MS, AO4812-MS, AO4842-MS, AO4882-MS, NCEP15T14, MMFTN3019E-MS, SI2301AI-MS, SI2302AI-MS, WPM2015-MS, WPM2341-MS, MEM2301X, MEM2301XG-N, MEM2302M3
Keywords - AO4884-MS MOSFET specs
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