AO4884-MS - параметры транзистора MOSFET, его аналоги, datasheet

AO4884-MS Datasheet (PDF)

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www.msksemi.comAO4884-MSSemiconductorCompianceD1D1D2D2General FeaturesS1G1S2V = 40V I =10ADS DG2R

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AO4884 40V Dual N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AO4884 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This is an all ID (at VGS=10V) 10Apurpose device that is suitable for use in a wide range of RDS(ON) (at VGS=10V)

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SMD Type MOSFETDual N-Channel MOSFETAO4884 (KO4884)SOP-8 Unit:mm Features VDS (V) = 40V ID = 10A (VGS = 10V)1.50 0.15 RDS(ON) 13m (VGS = 10V) RDS(ON) 16m (VGS = 4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D1D2G1G2S1S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 40V Gat

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AO4884www.VBsemi.twDual N-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.010 at VGS = 10 V 1240 5.9 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 10Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

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