AO4884-MS - описание и поиск аналогов

www.msksemi.com AO4884-MS Semiconductor Compiance D1 D1 D2 D2 General Features S1 G1 S2 V = 40V I =10A DS D G2 R

AO4884 40V Dual N-Channel MOSFET General Description Product Summary VDS 40V The AO4884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all ID (at VGS=10V) 10A purpose device that is suitable for use in a wide range of RDS(ON) (at VGS=10V)

SMD Type MOSFET Dual N-Channel MOSFET AO4884 (KO4884) SOP-8 Unit mm Features VDS (V) = 40V ID = 10A (VGS = 10V) 1.50 0.15 RDS(ON) 13m (VGS = 10V) RDS(ON) 16m (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 40 V Gat

AO4884 www.VBsemi.tw Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.010 at VGS = 10 V 12 40 5.9 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 10 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch