All MOSFET. MMFTN3019E-MS Datasheet

 

MMFTN3019E-MS MOSFET. Datasheet pdf. Equivalent


   Type Designator: MMFTN3019E-MS
   Marking Code: KN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 0.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: SOT523

 MMFTN3019E-MS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MMFTN3019E-MS Datasheet (PDF)

 ..1. Size:330K  msksemi
mmftn3019e-ms.pdf

MMFTN3019E-MS
MMFTN3019E-MS

www.msksemi.comMMFTN3019E-MSSemiconductor CompianceAbsolute Maximum Ratings T = 25C unless otherwise notedASymbol Parameter Value UnitsVDS Drain-Source Voltage 30 VVGS Continuous Gate-Source Voltage 20V V3I Continuous Drain Current 100 mADP Power Dissipation 150 mWD2RJA Thermal Resistance from Junction to Ambient 833 C /W1. Gate2. SourceTSTG Storage Te

 4.1. Size:522K  semtech
mmftn3019e.pdf

MMFTN3019E-MS
MMFTN3019E-MS

MMFTN3019E N-Channel Field Effect Transistor Applications Interfacing, switching Features Drain Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Gate Drive circuits can be simple Parallel use is easy SourceOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain-Source Vo

 6.1. Size:462K  semtech
mmftn3018w.pdf

MMFTN3019E-MS
MMFTN3019E-MS

MMFTN3018W Silicon N-Channel MOSFET DrainApplications Interfacing, switching Gate1. Gate 2. Source 3. Drain SourceSOT-323 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain Source Voltage VDSS 30 VGate Source Voltage VGSS 20 VDrain Current - Continuous ID 100 mA Drain Current - Pulsed IDP 1) 400 200 mWTotal Power

 8.1. Size:215K  semtech
mmftn3406.pdf

MMFTN3019E-MS
MMFTN3019E-MS

MMFTN3406 N-Channel Enhancement Mode Power MOSFET 1. Gate 2. Source 3. DrainTO-236 Plastic Package DrainGate SourceAbsolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value UnitDrain-Source Voltage VDSS 30 VGate-Source Voltage VGS 20 VContinuous Drain Current ID 3.6 ADrain Current - Pulsed 1) IDM 15 APower Dissipation 1) Pd 1.4 WTherm

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History: AOB600A70L | IRFP4368PBF

 

 
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