MMFTN3019E-MS - описание и поиск аналогов

www.msksemi.com MMFTN3019E-MS Semiconductor Compiance Absolute Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Value Units VDS Drain-Source Voltage 30 V VGS Continuous Gate-Source Voltage 20V V 3 I Continuous Drain Current 100 mA D P Power Dissipation 150 mW D 2 R JA Thermal Resistance from Junction to Ambient 833 C /W 1. Gate 2. Source TSTG Storage Te

MMFTN3019E N-Channel Field Effect Transistor Applications Interfacing, switching Features Drain Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Gate Drive circuits can be simple Parallel use is easy Source O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain-Source Vo

MMFTN3018W Silicon N-Channel MOSFET Drain Applications Interfacing, switching Gate 1. Gate 2. Source 3. Drain Source SOT-323 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain Source Voltage VDSS 30 V Gate Source Voltage VGSS 20 V Drain Current - Continuous ID 100 mA Drain Current - Pulsed IDP 1) 400 200 mW Total Power

MMFTN3406 N-Channel Enhancement Mode Power MOSFET 1. Gate 2. Source 3. Drain TO-236 Plastic Package Drain Gate Source Absolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID 3.6 A Drain Current - Pulsed 1) IDM 15 A Power Dissipation 1) Pd 1.4 W Therm