All MOSFET. STP32N05L Datasheet

 

STP32N05L Datasheet and Replacement


   Type Designator: STP32N05L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 25 nC
   tr ⓘ - Rise Time: 430 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO220
 

 STP32N05L substitution

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STP32N05L Datasheet (PDF)

 ..1. Size:393K  st
 stp32n05l.pdf pdf_icon

STP32N05L

STP32N05LSTP32N05LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP32N05L 50 V

 7.1. Size:201K  st
 stp32n06.pdf pdf_icon

STP32N05L

STP32N06LSTP32N06LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP32N06L 60 V

 7.2. Size:393K  st
 stp32n06l.pdf pdf_icon

STP32N05L

STP32N06LSTP32N06LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP32N06L 60 V

 8.1. Size:1086K  st
 stb32n65m5 stf32n65m5 sti32n65m5 stp32n65m5 stw32n65m5.pdf pdf_icon

STP32N05L

STB32N65M5, STF32N65M5, STI32N65M5STP32N65M5, STW32N65M5N-channel 650 V, 0.095 , 24 A, MDmesh V Power MOSFETin D2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS@ Type RDS(on) max IDTJmax 33123 12STB32N65M5 710 V

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Keywords - STP32N05L MOSFET datasheet

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