TN2106N3-G Datasheet and Replacement
Type Designator: TN2106N3-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 17 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO92
TN2106N3-G substitution
TN2106N3-G Datasheet (PDF)
tn2106.pdf

Supertex inc. TN2106N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This low threshold, enhancement-mode (normally-off) Low power drive requirement transistor utilizes a vertical DMOS structure and Supertexs Ease of paralleling well-proven, silicon-gate manufacturing process. This Low CISS and fast switching spe
ixtn210p10t.pdf

Advance Technical InformationTrenchPTM VDSS = -100VIXTN210P10TPower MOSFET ID25 = - 210A RDS(on) 7.5m trr 200nsP-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierminiBLOCE153432SGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C -100 VDVDGR TJ = 25C to 150C, RGS = 1M
Datasheet: MEM4N60A3G , MIC94052 , MIC94053 , TN0106 , TN0110 , TN0604 , TN0702 , TN2106K1-G , STP65NF06 , TN2524 , TP2104K1 , TP2104N3 , TP2435 , 2N7002KWA , 2SK3019A , BSS138A , BSS138AKDW .
History: LS3955 | NTA4001N | KDB7045L | NTTFS4937N | FDG6321C
Keywords - TN2106N3-G MOSFET datasheet
TN2106N3-G cross reference
TN2106N3-G equivalent finder
TN2106N3-G lookup
TN2106N3-G substitution
TN2106N3-G replacement
History: LS3955 | NTA4001N | KDB7045L | NTTFS4937N | FDG6321C



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