TN2106N3-G PDF and Equivalents Search

 

TN2106N3-G Specs and Replacement

Type Designator: TN2106N3-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 17 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO92

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TN2106N3-G datasheet

 8.1. Size:716K  supertex
 tn2106.pdf pdf_icon

TN2106N3-G

Supertex inc. TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This low threshold, enhancement-mode (normally-off) Low power drive requirement transistor utilizes a vertical DMOS structure and Supertex s Ease of paralleling well-proven, silicon-gate manufacturing process. This Low CISS and fast switching spe... See More ⇒

 9.1. Size:178K  ixys
 ixtn210p10t.pdf pdf_icon

TN2106N3-G

Advance Technical Information TrenchPTM VDSS = -100V IXTN210P10T Power MOSFET ID25 = - 210A RDS(on) 7.5m trr 200ns P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C -100 V D VDGR TJ = 25 C to 150 C, RGS = 1M ... See More ⇒

Detailed specifications: MEM4N60A3G, MIC94052, MIC94053, TN0106, TN0110, TN0604, TN0702, TN2106K1-G, IRFZ46N, TN2524, TP2104K1, TP2104N3, TP2435, 2N7002KWA, 2SK3019A, BSS138A, BSS138AKDW

Keywords - TN2106N3-G MOSFET specs

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