TN2524 Datasheet and Replacement
Type Designator: TN2524
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 240 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.36 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10(max) nS
Cossⓘ - Output Capacitance: 35 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
Package: SOT89
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TN2524 Datasheet (PDF)
tn2524.pdf
Supertex inc. TN2524N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Low threshold (2.0V max.) This low threshold, enhancement-mode (normally-off) High input impedance transistor utilizes a vertical DMOS structure and Supertexs Low input capacitance (125pF max.) well-proven, silicon-gate manufacturing process. This Fast switching speeds com
tn2529.pdf
TN2529N-Channel Enhancement-ModeVertical DMOS FETFeaturesGeneral DescriptionThe Supertex TN2529 is a low threshold enhancement- Low threshold (2.0V max.)mode transistor that utilizes an advanced vertical High input impedanceDMOS structure and Supertexs well-proven silicon-gate Low input capacitance (125pF max.)manufacturing process. This combination produces
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 20N03L-TO252 | 2N6762JTXV
Keywords - TN2524 MOSFET datasheet
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History: 20N03L-TO252 | 2N6762JTXV
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